Abstract

Pulsed (IV) measurements play a crucial role in understanding the interaction of input and output currents and voltages in a transistor. For GaN field-effect transistors (FETs), this involves measuring the output current as a function of varying input voltages in quasi-isothermal conditions.
Due to their high-power delivery capacity, GaN devices are prone to self-heating and trapping effects, making accurate voltage pulsing crucial.

By pulsing voltages between the quiescent and warm-up values and adjusting the pulse widths, the average power delivered to the component is reduced, minimizing self-heating. This technique ensures near-isothermal performance, enabling more accurate and efficient testing.

IVCAD Suite also allows for the detection and visualization of trapping phenomena, such as gate and drain delay, in GaN transistors. It is easy to observe the evolution of trapping effects with different quiescent bias levels.

In addition to control over the AMCAD SAS Pulse IV system, it supports comprehensive RF measurements and wafer inspection through seamless integration with various probe stations and RF test instruments.
This Tech Talk will kick off a series of 4 sessions focused on transistor measurement and modeling to showcase the features of SIMULIA IVCAD Suite 4.0.

Highlights:

Why Transistors should be tested in Pulsed Conditions
Learn how to measure transistor DC voltage and current response under pulsed conditions with IVCAD 4.0
Manage synchronized pulsed S-parameter measurements and easily explore/analyze measurement data.